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? irfb41n15dpbf IRFIB41N15DPBF irfs41n15dpbf irfsl41n15dpbf 1 2017-04-27 absolute maximum ratings symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 41 a i d @ t c = 100c continuous drain current, v gs @ 10v 29 i dm pulsed drain current ? 164 p d @t a = 25c maximum power dissipation d2-pak 3.1 w p d @t c = 25c maximum power dissipation to-220 200 p d @t c = 25c maximum power dissipation to-220 full-pak 48 linear derating factor ?to-220 1.3 linear derating factor ? to-220 full-pak 0.32 v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ? 2.7 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? mounting torque, 6-32 or m3 screw ? 10 lbf?in (1.1n?m) ? ? w/c thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ??? 0.75 c/w r ? jc junction-to-case, to-220 full-pak ??? 3.14 r ? cs case-to-sink, flat, greased surface ? 0.50 ??? r ? ja junction-to-ambient,to-220 ? ??? 62 r ? ja junction-to-ambient, to-220 full-pak ??? 65 r ? ja junction-to-ambient,d2-pak ? ??? 40 d2 pak irfs41n15dpbf g d s gate drain source applications ? high frequency dc-dc converters s d g s d g d to-262 pak irfsl41n15dpbf hexfet ? power mosfet s d g to-220ab irfb41n15dpbf base part number package type standard pack orderable part number form quantity irfb41n15dpbf to-220 tube 50 irfb41n15dpbf irfsl41n15dpbf to-262 tube 50 irfsl41n15dpbf IRFIB41N15DPBF to-220 full-pak tube 50 IRFIB41N15DPBF irfs41n15dpbf d2-pak tube 50 irfs41n15dpbf tape and reel left 800 irfs41n15dtrlpbf benefits ? low gate-to-drain charge to reduce switching losses ? fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) ? fully characterized avalanche voltage and current ? lead-free v dss 150v r ds(on) max 0.045 ?? i d 41a g d s to-220 full-pak irfb41n15dpbf
? irfb/ib/s/sl41n15dpbf 2 2017-04-27 notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 1.5mh, r g = 25 ? , i as = 25a. ? i sd ?? 25a, di/dt ?? 340a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 300s; duty cycle ? 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? this is only applied to to-220ab package. ?? this is applied to d 2 pak, when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and ? soldering techniques refer to application note #an-994. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.17 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.045 ??? v gs = 10v, i d = 25a ? v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 25 a v ds = 150 v, v gs = 0v ??? ??? 250 v ds = 120v,v gs = 0v,t j =150c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 30v gate-to-source reverse leakage ??? -100 v gs = -30v dynamic @ t j = 25c (unless otherwise specified) gfs forward trans conductance 18 ??? ??? s v ds = 50v, i d = 25a q g total gate charge ??? 72 110 i d = 25a q gs gate-to-source charge ??? 21 31 v ds = 120v q gd gate-to-drain charge ??? 35 52 v gs = 10v ? t d(on) turn-on delay time ??? 16 ??? ns v dd = 75v t r rise time ??? 63 ??? i d = 25a t d(off) turn-off delay time ??? 25 ??? r g = 2.5 ?? t f fall time ??? 14 ??? v gs = 10v ? c iss input capacitance ??? 2520 ??? pf ? v gs = 0v c oss output capacitance ??? 510 ??? v ds = 25v c rss reverse transfer capacitance ??? 110 ??? ? = 1.0mhz c oss output capacitance ??? 3090 ??? v gs = 0v, v ds = 1.0v ? = 1.0mhz c oss output capacitance ??? 230 ??? v gs = 0v, v ds = 120v ? = 1.0mhz c oss eff. effective output capacitance ??? 250 ??? v gs = 0v, v ds = 0v to 120v ? nc ? diode characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 41 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 164 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 25a,v gs = 0v ?? t rr reverse recovery time ??? 170 260 ns t j = 25c ,i f = 25a q rr reverse recovery charge ??? 1.3 1.9 ? c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) avalanche characteristics parameter typ. max. units e as single pulse avalanche energy ? ??? 470 mj i ar avalanche current ? ??? 25 a ? e ar repetitive avalanche energy ? ??? 20 mj
? irfb/ib/s/sl41n15dpbf 3 2017-04-27 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 9. 0v 8. 0v 7. 5v 7. 0v 6. 5v 6. 0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 6.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 9. 0v 8. 0v 7. 5v 7. 0v 6. 5v 6. 0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 6.0v 1 10 100 1000 6 7 8 9 10 11 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 41a
? irfb/ib/s/sl41n15dpbf 4 2017-04-27 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 25a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j fig. 7 typical source-to-drain diode forward voltage 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
? irfb/ib/s/sl41n15dpbf 5 2017-04-27 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? irfb/ib/s/sl41n15dpbf 6 2017-04-27 ? fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 13b. gate charge test circuit fig 13a. gate charge waveform 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10a 21a 25a fig 12c. maximum avalanche energy vs. drain current
? irfb/ib/s/sl41n15dpbf 7 2017-04-27 ? fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? irfb/ib/s/sl41n15dpbf 8 2017-04-27 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . note: for the most current drawing please refer to website at http://www.irf.com/package/
? irfb/ib/s/sl41n15dpbf 9 2017-04-27 to-220 full-pak package outline (dimensions are shown in millimeters (inches)) to-220 full-pak part marking information to-220ab full-pak packages are not reco mmended for surface mount application. note: for the most current drawing please refer to website at http://www.irf.com/package/
? irfb/ib/s/sl41n15dpbf 10 2017-04-27 ? d2-pak (to-263ab) part marking information d2-pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code note: for the most current drawing please refer to website at http://www.irf.com/package/
? irfb/ib/s/sl41n15dpbf 11 2017-04-27 to-262 part marking information to-262 package outline (dimensions are shown in millimeters (inches) logo recti fi er international lot code assembly logo recti fi er international date code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = designates lead-free example: this is an irl3103l lot code 1789 assembly part number date code week 19 line c lot code year 7 = 1997 assembled on ww 19, 1997 in the assembly line "c" note: for the most current drawing please refer to website at http://www.irf.com/package/
? irfb/ib/s/sl41n15dpbf 12 2017-04-27 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d2-pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
? irfb/ib/s/sl41n15dpbf 13 2017-04-27 ? qualification information? qualification level ? industrial (per jedec jesd47f) ? to-220ab n/a to-220 full-pak to-262 d2-pak msl1 (per jedec j-std-020d) ?? rohs compliant yes moisture sensitivity level ? ? applicable version of jedec standar d at the time of product release. trademarks of infineon technologies ag hvic?, ipm?, pfc?, au-convertir?, aurix?, c166?, canpak?, ci pos?, cipurse?, cooldp?, coolgan?, coolir?, coolmos?, coolset?, coolsic?, dave?, di-pol?, directfet?, drbl ade?, easypim?, econobridge?, econodual?, ec onopack?, econopim?, eicedriver?, eupec?, fcos?, ganpowir?, hexfet?, hitfet?, hybridpack?, imotion?, iram?, isofac e?, isopack?, ledrivir?, litix?, mipaq?, modstack?, my-d?, nov alithic?, optiga?, optimos?, origa?, powiraudio?, powi rstage?, primepack?, primestack?, profet?, pro-sil?, rasic?, real3?, smartlewis?, s olid flash?, spoc?, strongirfet?, supirbuck?, tempfe t?, trenchstop?, tricore?, uhvic?, xhp?, xmc? trademarks updated november 2015 other trademarks all referenced product or service names and trademarks are the property of their respective owners. edition 2016-04-19 published by infineon technologies ag 81726 munich, germany ? 2016 infineon technologies ag. all rights reserved. do you have a question about this document? email: erratum@infineon.com document reference ifx1 important notice the information given in th is document shall in no event be regarded as a guarantee of conditions or characteristics (?bescha ff enheitsgarantie?) . with respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer?s products and any use of the product of infineon technologies in customer?s applications. the data contained in th is document is exclusively intended for technically trained sta ff . it is the responsibility of customer?s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies off ice ( www.infineon.com ). please note that this product is not qualified according to the aec q100 or aec q101 documents of the automotive electronics council. warnings due to technical requirements products may contain dangerous substanc es. for information on the types in question please contact your nearest infineon technologies o ff ice. except as otherwise explicitly approved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technologies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 04/27/2017 x changed datasheet with infineon logo - all pages. x corrected package outline on page 8,9,10,11. x added disclaimer on last page.

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